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CSD88539NDT

Manufacturer:

Texas Instruments

Mfr.Part #:

CSD88539NDT

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2.1 W 60 V Continuous Drain Current (ID):15 A 7.2 nC

ParameterValue
Length4.9 mm
Width3.91 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.75 mm
PackagingReel
Thickness1.58 mm
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingGold
Lifecycle StatusProduction (Last Updated: 1 day ago)
Max Power Dissipation2.1 W
Power Dissipation2.1 W
Threshold Voltage3 V
Number of Channels2
Input capacitance741 pF
Continuous Drain Current (ID)15 A
Rds On Max28 mΩ
Drain to Source Voltage (Vdss)60 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time5 ns
Turn-Off Delay Time14 ns
Element ConfigurationDual
Fall Time4 ns
Rise Time9 ns
Gate Charge7.2 nC
Drain to Source Resistance27 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
Gate to Source Threshold Voltage2.6 V

Stock: 30

Distributors
pcbx
Unit Price$0.84662
Ext.Price$0.84662
QtyUnit PriceExt.Price
1$0.84662$0.84662
10$0.68909$6.89090
25$0.64401$16.10025
50$0.60188$30.09400
100$0.56250$56.25000
300$0.52570$157.71000
500$0.49131$245.65500
1000$0.46676$466.76000